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NDF08N60Z
N-Channel Power MOSFET
600 V, 0.95 W
Features
? Low ON Resistance
? Low Gate Charge
? ESD Diode ? Protected Gate
? 100% Avalanche Tested
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
V DSS
600 V
http://onsemi.com
R DS(ON) (MAX) @ 3.5 A
0.95 W
Rating
Drain ? to ? Source Voltage
Continuous Drain Current R q JC (Note 1)
Continuous Drain Current R q JC
T A = 100 ° C (Note 1)
Pulsed Drain Current,
V GS @ 10 V
Symbol
V DSS
I D
I D
I DM
NDF08N60Z
600
8.4
5.3
30
Unit
V
A
A
A
G (1)
N ? Channel
D (2)
Power Dissipation
Gate ? to ? Source Voltage
Single Pulse Avalanche Energy,
I D = 7.5 A
P D
V GS
E AS
36
± 30
235
W
V
mJ
NDF08N60ZG
TO ? 220FP
CASE 221D
MARKING
DIAGRAM
S (3)
ESD (HBM)
(JESD 22 ? A114)
V esd
4000
V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
T A = 25 ° C) (Figure 14)
Peak Diode Recovery (Note 2)
Continuous Source Current (Body Diode)
V ISO
dv/dt
I S
4500
4.5
7.5
V
V/ns
A
NDF08N60ZG
or
NDF08N60ZH
AYWW
Maximum Temperature for Soldering
Leads
T L
260
° C
NDF08N60ZH
TO ? 220FP
Gate
Source
Operating Junction and T J , T stg ? 55 to 150 ° C
Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
CASE 221AH
A = Location Code
Y = Year
WW = Work Week
Drain
1. Limited by maximum junction temperature
2. I D v 7.5 A, di/dt ≤ 200 A/ m s, V DD ≤ BV DSS , T J ≤ 150 ° C.
G, H
= Pb ? Free, Halogen ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2013
July, 2013 ? Rev. 3
1
Publication Order Number:
NDF08N60Z/D
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